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| AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Device Performance Features High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output power pulsed 4 s at 10% duty. Large signal impedance parameters available. ESD Rating* AGR19180EF HBM MM CDM Minimum (V) 500 50 1000 Class 1B A 4 375D-03, STYLE 1 Figure 1. AGR19180EF (flanged) Package CDMA Features Typical two carrier CDMA performance: VDD = 28 V, IDQ = 1600 mA, POUT = 38 W, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97 CDMA pilot, sync, paging, traffic codes 8--13 (9 channels) 1.2288 MHz channel bandwidth (BW), adjacent channel power ration (ACPR) measured over a 30 kHz BW at f1 - 885 kHz, f2 + 885 kHz. Distortion products measured over 1.2288 MHz channel BW at f1 - 2.5 MHz, f2 + 2.5 MHz. Peak/avg = 9.72 dB @ 0.01% probability on CCDF: -- Output power: 38 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -33 dBc. -- ACPR: -48.5 dBc -- Return loss: -12 dB. * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD -- TJ TSTG Value 65 -0.5, 15 500 3 200 -65, 150 U nit Vdc Vdc W W/C C C Symbol RJC Value 0.35 U nit C/W * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Symbol Off Characteristics 300 V(BR)DSS Drain-source Breakdown Voltage (VGS = 0, ID = 400 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS IDSS Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics GFS Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 600 A) VGS(TH) VGS(Q) Gate Quiescent Voltage (VDS = 28 V, ID = 2 x 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) Parameter Min 65 -- -- -- -- -- -- Typ -- -- -- 12 -- 3.8 0.08 Max -- 6 18 200 -- 3.0 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characateristics (continued) Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit -- 4.0 -- pF CRSS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (Part is internally matched both on input and output.) Functional Tests (in Agere Systems Supplied Test Fixture) (in Supplied Test Fixture) Common-source Amplifier Power Gain GPS -- 14.5 -- dB (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) -- 26 -- % Drain Efficiency (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IM3 -- -33 -- dBc Third-order Intermodulation Distortion* (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR -- -48.5 -- dBc Adjacent Channel Power Ratio* (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 - 885 kHz and f2 + 885 kHz, referenced to the carrier channel power) Input Return Loss IRL -- -12 -- dB (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Ruggedness No degradation in output (VDD = 28 V, POUT = 180 W continuous wave (CW), IDQ = 1600 mA, power. f = 1930 MHz, VSWR = 10:1 [all phase angles]) * N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 2 x 800 mA, and POUT = 38 W average. . AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations R1 VGG R3 R2 C4 FB1 + C5 C6 C12 C7 C41 Z9 Z3 Z1 RF INPUT Z2 2B Z4 C2 Z6 Z8 Z10 C1 Z5 Z7 2A 1A Z19 + VDD + C3 C23 C24 C25 C26 C37 C27 C28 C29 Z11 Z13 Z21 C21 Z15 Z17 Z18 RF OUTPUT 3 DUT 1B Z12 Z20 Z14 Z22 C22 Z16 R4 VGS R6 R5 C9 FB2 VDD + + + PINS: 1A. DRAIN 1B. DRAIN 2A. GATE 2B. GATE 3. SOURCE C8 C10 C11 C13 C14 C42 C30 C31 C32 C33 C38 C34 C35 C36 A. Schematic C3 R2 R3 C4 C5 C6 C12 FB1 R1 C23 C26 C37 C27 C2 8 C2 9 C7 C41 C24 C25 C1 C21 C2 C22 C14 C42 R6 FB2 C8 R4 R5 C30 C9 C10C11 C13 C31 C32 C38 C33 C34 C35 C36 B. Component Layout Parts List: ? Microstrip line: Z1 0.500 in. x 0.067 in.; Z2, Z17 1.080 in. x 0.110 in.; Z3, Z16 0.210 in. x 0.067 in.; Z4, Z15 2.020 in. x 0.067 in.; Z5, Z6 0.230 in. x 0.067 in.; Z7, Z8 0.455 in. x 0.700 in.; Z9, Z10 1.100 in. x 0.035 in.; Z11, Z12 0.475 in. x 0.740 in.; Z13, Z14 0.100 in. x 0.067 in.; Z18 0.230 in. x 0.067 in.; Z19, Z20 0.490 in. x 0.050 in.; Z21, Z22 0.160 in. x 0.285 in. (R) ? ATC chip capacitor: C1, C2, C21, C22: 10 pF; C7, C14, C23, C30, C41, C42: 8.2 pF; C12, C13: 1000 pF. (R) ? Kemet tantalum capacitor: C27, C34: 10 F, 35 V T491D; C4, C9, C37, C38: 1 F, 50 V T491C. (R) ? Kemet chip capacitor: C5, C10, C18, C26, C33: 0.1 F. (R) ? Sprague tantalum surface-mount chip capacitor: C3, C8, C28, C29, C35, C36: 22 F, 35 V. (R) ? Vitramon 1206 capacitor: C5, C12: 22000 pF. ? 1206 size chip resistor: R1, R4: 4.7 k; R2, R5 560 k, R3, R6: 1.02 k. (R) ? Fair-Rite ferrite bead: FB1, FB2: 2743019447. (R) ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. Test Circuit AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 170 U CT IN D 90 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 0.2 5.0 180 LOA D < 0.2 0.49 OW A RD HST N GT -170 EL E 0.1 -90 0.4 ) / Yo (-jB CE -160 -85 AN PT CE US ES WA 1. 0.2 V 0 .47 < -80 0 -15 IV CT .04 0.4 IN DU 0.3 ,O o) 5 5 0.4 -70 06 0. -65 0.6 -60 1.6 0.8 0.9 1.0 1.2 -5 0 -5 5 MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) ZS (Complex Source Impedance) 2.58 - j5.9 2.36 - j5.26 2.37 - j4.51 ZL (Complex Optimum Load Impedance) 3.2 - j4.67 2.85 - j3.86 2.72 - j3.07 ZS = Test circuit impedance as measured from gate to gate, balanced configuration. ZL = Test circuit impedance as measured from drain to drain, balanced configuration. DRAIN (1) - + ZS GATE (2) + - ZL SOURCE (3) INPUT MATCH DUT Figure 3. Series Equivalent Input and Output Impedances 0.3 -4 0.1 4 6 -3 5 -70 5 0.35 0.15 0.36 0.14 -4 0 -80 0.37 0.13 -90 0.12 0.38 0.11 -100 0.39 0.1 0.4 -110 0.0 0.4 9 Z0 = 10 0.7 1.4 OUTPUT MATCH 0. 32 0. 1.8 18 0 -5 -25 4 .4 5 0. 0 3 0.3 7 0.1 2 .0 -30 -60 0.4 0.2 CA P AC ITI VE RE AC TA 1 NC EC OM 0.4 2 -12 0.08 0 PO N EN T (-j -1 0. 40 4 Z X/ -20 0.0 3. 0 ZS f1 -75 0.6 f3 6 0 R -15 4.0 1. 0 0.8 f1 0 -10 f3 0.48 0.6 5.0 ZL 0. 8 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 10 20 50 20 10 0. 8 0.6 0.4 10 0.1 -1 20 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES LE OF ANG 0.2 50 -20 0.2 2 0.2 8 0.2 1 -30 0.2 0.3 0.2 9 -4 0 0. 19 0. 31 0. 07 30 0. 43 AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 18 17 Idq = 2400mA Idq = 2000mA Idq = 1600mA Gps, POWER GAIN (dB) 16 15 14 Idq = 1200mA Idq = 800mA 13 12 Vdd = 28V Center Frequency = 1960 MHz Two-Tone Meas urement, 100kHz Tone Spacing 1 Pout, OUTPUT POWER (WATTS) PEP 10 100 1000 Figure 4. Two-Tone Power Gain versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 Vdd = 28V Center Frequency = 1960 MHz Two-Tone Measurement, 100kHz Tone Spacing -30 Idq = 800mA Idq =1200mA Idq = 2400mA -40 -50 Idq =2000mA -60 Idq =1600mA 1 10 10 0 10 0 0 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 -80 -90 Vdd = 28V Idq = 1600mA Center Frequency = 1960 MHz Two-Tone Measurement, 100kHz Tone Spacing 3rd Order 5th Order 7th Order 1 Pout, OUTPUT POWER (WATTS) PEP 10 100 1 0 00 Figure 6. Intermodulation Distortion versus Output Power 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 P3dB = 53.88 dBm (244.34W) Pout, OUTPUT POWER (dBm) P1dB = 53 dBm (199.77W) Vdd = 28 Vdc, Idq = 1600 mA Pulsed CW 4 msec (on), 40 msec (off) Center Frequency = 1960 MHz 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) 39 40 41 42 43 44 4 5 Figure 7. Pulsed CW Output Power versus Input Power AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 50 45 40 35 30 25 20 15 10 5 0 IM3 Efficiency ACPR -20 -30 -40 -50 -60 -70 -80 -90 -100 Gps IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. 9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF) Channel Spacing (Bandwidth) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz) 0 20 40 60 Pout, OUTPUT POWER (WATTS) Avg. 80 100 Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power 50 45 GPS, POWER GAIN, EFFICIENCY (%) 35 30 25 20 15 10 5 0 2.25 MHz ( 1MHz) 885 kHz (30 kHz) 1.25 MHz (12.5 kHz) Gps -30 -40 -50 -60 -70 -80 CDMA 9 Channel Forward Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32 0 20 40 60 Pout, OUTPUT POWER (WATTS), AVG. 80 -90 -100 100 Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power ADJACENT CHANNEL POWER RATIO (dBc) 40 Vdd = 28 Vdc, Idq = 1600 mA f = 1990 MHz Bandwidth = 1.2288 MHz Channel Spacing ( Channel Bandwidth) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz) 2.25 MHz (1MHz) 0 -10 Efficiency -20 IRL, RETURN LOSS (dB), IM3 (dBc), ACPR (dBc) Vdd = 28 Vdc, Idq = 1600 mA f 1 = 1958.75 MHz, f2 = 1961.25 MHz 2-Carrier N-CDMA 0 -10 Gps, POWER GAIN (dBm), EFFICIENCY (%) IRL AGR19180EF 180 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. PINS: 1A. DRAIN 1B. DRAIN 2A. GATE 2B. GATE 3. SOURCE 1A PEAK DEVICES AGR19180EF 1B 3 XXXX 2A 2B XXXX - 4 Digit Trace Code |
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